产品属性 | 属性值 |
Packaging: | Tube |
Series: | NexFET |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25C: | 200A (Ta) |
Drive Voltage (Max Rds On: | 4.5V |
Min Rds On): | 10V |
Vgs(th) (Max) @ Id: | 2.4V @ 250A |
Gate Charge (Qg) (Max) @ Vgs: | 81nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 6620pF @ 30V |
Vgs (Max): | 20V |
FET Feature: | - |
Power Dissipation (Max): | 300W (Tc) |
Rds On (Max) @ Id: | 2 mOhm @ 100A |
Vgs: | 10V |
Operating Temperature: | -55C ~ 175C (TJ) |
Supplier Device Package: | Through Hole |
Supplier Device Package: | TO-220-3 |
Package / Case: | TO-220-3 |
Other: |